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 BC807/BC808
BC807/BC808
Switching and Amplifier Applications
* Suitable for AF-Driver stages and low power output stages * Complement to BC817/BC818
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCES Parameter Collector-Emitter Voltage : BC807 : BC808 VCEO Collector-Emitter Voltage : BC807 : BC808 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature -45 -25 -5 -800 -310 150 -65 ~ 150 V V V mA mW C C -50 -30 V V Value Units
Electrical Characteristics Ta=25C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC807 : BC808 Collector-Emitter Breakdown Voltage : BC807 : BC808 Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -10mA, IB=0 Min. -45 -25 IC= -0.1mA, VBE=0 -50 -30 IE= -0.1mA, IC=0 VCE= -25V, VBE=0 VEB= -4V, IC=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA IC= -500mA, IB= -50mA VCE= -1V, IC= -300mA VCE= -5V, IC= -10mA f=50MHz VCB= -10V, f=1MHz 100 12 100 60 -5 -100 -100 630 -0.7 -1.2 V V MHz pF V V V nA nA Typ. Max. Units V V
BVCES
BVEBO ICES IEBO hFE1 hFE2 VCE (sat) VBE (on) fT Cob
(c)2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC807/BC808
hFE Classification
Classification hFE1 hFE2 16 100 ~ 250 6025 160 ~ 400 10040 250 ~ 630 170-
Marking Code
Type Marking 807-16 9FA 807-25 9FB 807-40 9FC 808-16 9GA 808-25 9GB 808-40 9GC
(c)2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC807/BC808
Typical Characteristics
-500
-20
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
-400
-300
mA - 5.0 A IB = - 4.5m IB = 4.0mA A IB = - 3.5m A IB = - 3.0m A IB = - 2.5m mA IB = - 2.0 IB =
IB=
-16
A - 80 A - 70 I=
B
IB=
A - 60
IB=
P
T
A - 50
IB= - 40
=6 00 mW
-12
A
30A
A 1.5m IB = PT = 60 0mW
-200
-8
IB = -
IB = - 1.0mA IB = - 0.5mA
IB = - 20
-4
A
-100
IB = - 10A
IB = 0
-0 -0 -1 -2 -3 -4 -5
-0 -0 -10 -20 -30
IB = 0
-40 -50
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
-10
PULSE
IC = 10 IB PULSE
V CE(sat)
VCE = - 2.0V
hFE, DC CURRENT GAIN
100
-1
- 1.0V
10
-0.1
V BE(sat)
1 -0.1
-1
-10
-100
-1000
-0.01 -0.1
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
-1000
100
IC[mA], COLLECTOR CURRENT
VCE = -1V PULSE
f = 1.0MHz
Cib, Cob[pF], CAPACITANCE
-100
Cib
Cob
10
-10
-1
-0.1 -0.4
-0.5
-0.6
-0.7
-0.8
-0.9
1 -0.1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE VBE[V], BASE-EMITTER VOLTAGE VEB[V], EMITTER-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Input Output Capacitance
(c)2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC807/BC808
Typical Characteristics (Continued)
1000
fT[MHz], GAIN BANDWIDTH PRODUCT
VCE = -5.0V
100
10 -1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 7. Current Gain Bandwidth Product
(c)2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC807/BC808
Package Dimensions
SOT-23
0.20 MIN 2.40
0.10
0.40 0.03
1.30
0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 0.03 0.96~1.14 2.90 0.10
0.12 -0.023
+0.05
0.95 0.03 0.95 0.03 1.90 0.03 0.508REF
0.97REF
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. I1


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